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| DU2810S RF Power MOSFET Transistor 10W, 2-175MHz, 28V Features M/A-COM Products Released; RoHS Compliant Package Outline * * * * * N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Low noise floor Parameter Symbol VDS VGS IDS PD TJ TSTG JC Rating 65 20 2.8 35 200 -65 to +150 2 Units V V A W C C C/W ABSOLUTE MAXIMUM RATINGS AT 25 C Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance TYPICAL DEVICE IMPEDANCE F (MHz) 30 50 100 200 ZIN () 20 - j11.0 24.0 - j15.0 18.0 - j18.0 12.0--j19.0 ZLOAD () 23.0 + j3.0 19.0 +j5.0 14.0 + j6.0 9.0 + j5.0 LETTER DIM A B C D E F G H J K MILLIMETERS MIN 24.64 18.29 20.07 9.47 6.22 5.64 2.92 2.29 4.04 6.58 .10 MAX 24.89 18.54 20.83 9.73 6.48 5.79 3.30 2.67 4.55 7.39 .15 INCHES MIN .970 .720 .790 .373 .245 .222 .115 .090 .159 .259 .004 MAX .980 .730 .820 .383 .255 .228 .130 .105 .179 .291 .006 VDD = 28V, IDQ = 100mA, POUT = 10.0W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP L Min 65 2.0 160 13 55 - Max 2.0 2.0 6.0 14 10 4.6 20:1 Units V mA A V S pF pF pF dB % - Test Conditions VGS = 0.0 V , IDS = 4.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 20 mA VDS = 10.0 V , IDS = 200 mA , Pulsed 80-300 s VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 100 mA, POUT = 10 W F =175 MHz VDD = 28.0 V, IDQ = 100 mA, POUT = 10 W F =175 MHz VDD = 28.0 V, IDQ = 100 mA, POUT = 10 W F =175 MHz D VSWR-T 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. DU2810S RF Power MOSFET Transistor 10W, 2-175MHz, 28V TEST FIXTURE SCHEMATIC M/A-COM Products Released; RoHS Compliant TEST FIXTURE ASSEMBLY 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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